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Infineon Technologies BCR 133L3 E6327 — Discrete Semiconductors

Infineon BCR 133L3 E6327 NPN Pre-Biased Transistor, 50 V

MPNBCR 133L3 E6327
End of Life

Infineon BCR 133L3 E6327 NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 250 mW power dissipation, 10 kOhm base and emitter-base resistors, 130 MHz transition frequency, SC-101/SOT-883 package.

$0.2900Ref. price · indicative, final on quote
Infineon Technologies BCR 133L3 E6327 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BCR 133L3 E6327 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250 mW
Frequency - transition130 MHz
PackageTape & Reel (TR)
CaseSC-101, SOT-883
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Built-in bias resistors simplify the BOM

The BCR 133L3 E6327: The BCR 133L3 is an NPN pre-biased transistor from Infineon that integrates two 10 kOhm resistors — one in series with the base (R1) and one from base to emitter (R2).

130 MHz transition frequency — fast enough for most switching

A 130 MHz transition frequency (fT) means this transistor can switch at several megahertz comfortably, covering PWM dimming, serial bus level shifting, and oscillator circuits.

Package choice: SOT-883 for tight layouts

Housed in the SC-101 / SOT-883 package (Infineon's PG-TSLP-3-4), this is a leadless, ultra-small 3-pin package suited for automated pick-and-place and reflow assembly. The 250 mW power dissipation limit means it is intended for low-power signal-level switching, not high-current drivers — keep the ambient temperature and PCB copper area in mind when derating.

Frequently asked questions

What is the R1 and R2 value of BCR 133L3 E6327?

Both the base resistor (R1) and the emitter-base resistor (R2) are 10 kOhms, making this a standard 10k/10k pre-biased transistor.