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Infineon Technologies BCR135WE6327 — Discrete Semiconductors

Infineon BCR135WE6327 NPN Pre-Biased Transistor, SC-70

MPNBCR135WE6327
Active

Infineon BCR135WE6327 NPN pre-biased digital transistor, SC-70 SOT-323 package, 100 mA collector current, 50 V VCEO, 150 MHz transition frequency, built-in 10 kOhm base and 47 kOhm emitter-base resistors.

Infineon Technologies BCR135WE6327 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BCR135WE6327 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency - transition150 MHz
PackageBulk
CaseSC-70, SOT-323
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

NPN pre-biased transistor with integrated bias network

It includes a 10 kOhm base resistor (R1) and a 47 kOhm emitter-base resistor (R2), eliminating two external components per transistor from the board.

Switching performance and power handling

Transition frequency is 150 MHz, adequate for typical switching speeds in digital input interfaces, relay drivers, and level shifters. The 250 mW power dissipation limit in the SC-70 package means the device is sized for signal-level loads rather than continuous high-current drive.

Housed in the SC-70 (SOT-323) package, the supplier device package is PG-SOT323-3-1. Surface-mount assembly with a compact footprint — three leads, no exposed pad. The small body suits dense PCB layouts where every square millimetre counts.

Frequently asked questions

What are the specifications of Infineon BCR135WE6327?

It is an NPN pre-biased transistor with built-in 10 kOhm base resistor and 47 kOhm emitter-base resistor. Maximum collector current is 100 mA, collector-emitter breakdown voltage is 50 V, transition frequency is 150 MHz, and power dissipation is 250 mW. It comes in an SC-70 (SOT-323) surface-mount package.

Is BCR135WE6327 equivalent to DTC114YCA?

Both are NPN pre-biased transistors with similar bias resistor values (10 kOhm base, 47 kOhm emitter-base), but the DTC114YCA is typically in a different package (SOT-23 or SOT-416). Pinout and footprint differ — verify the package compatibility for your PCB layout.

What is the maximum collector current of BCR135WE6327?

The maximum collector current (Ic) is 100 mA.

Is BCR135WE6327 RoHS compliant?

The part is listed as RoHS compliant based on the Infineon product status. No explicit RoHS certificate is in this record, but the active lifecycle and standard lead-free finish are consistent with RoHS compliance.