Dual PNP pre-biased transistor in SOT-363
The ROHM UMB2NTN is a dual PNP pre-biased transistor array in a compact UMT6 (SOT-363) surface-mount package. Each of the two PNP transistors integrates a 47kΩ base resistor (R1) and a 47kΩ emitter-base resistor (R2), eliminating the need for external bias resistors in switching and driver circuits. The device is rated for a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA per transistor, with a transition frequency of 250MHz.
Built-in bias resistors — what they save on the board
The 47kΩ base and emitter-base resistors are integrated on-chip, which means the UMB2NTN replaces two PNP transistors plus four external resistors with a single SOT-363 part. For a dual-channel load driver or a logic-level interface stage, that saves roughly 30 mm² of board area and eliminates four resistor placements from the pick-and-place bill. The Vce saturation is specified at 300mV max at 500µA base drive and 10mA collector current, which is typical for a pre-biased small-signal PNP.