ROHM Semiconductor UMB2NTN — Memory (DRAM / SRAM / Flash / EEPROM)
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RoHS Compliant · Lead-Free EIA-481 Standard
ROHM Semiconductor / Memory (DRAM / SRAM / Flash / EEPROM)

UMB2NTN Dual PNP Pre-Biased Transistor, 50V, 100mA, SOT-363

MPN UMB2NTN
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

ROHM UMB2NTN, dual PNP pre-biased transistor, 50V Vce, 100mA Ic, 47kΩ base/emitter resistors, 250MHz ft, UMT6 (SOT-363) package, surface mount, active.

In Stock: 6,000 pcs
MOQ: 10 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$0.45 / pc
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1+ pcs
$0.45
10+ pcs
$0.41
30+ pcs
$0.37
100+ pcs
$0.33
500+ pcs
$0.31
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$0.29
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$0.41 / ea · total $4.10

6,000 in stock — maximum per order · MOQ 10 · 3–4 days lead time

$0.37 / ea from 30 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Package / Case 6-TSSOP, SC-88, SOT-363

Full Technical Specifications

13 Parameters
UMB2NTN specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type2 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce68 @ 5mA, 5V
Power - max150mW
Frequency - transition250MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)47kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA
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Technical Details & Description

Dual PNP pre-biased transistor in SOT-363

The ROHM UMB2NTN is a dual PNP pre-biased transistor array in a compact UMT6 (SOT-363) surface-mount package. Each of the two PNP transistors integrates a 47kΩ base resistor (R1) and a 47kΩ emitter-base resistor (R2), eliminating the need for external bias resistors in switching and driver circuits.

Built-in bias resistors — what they save on the board

The 47kΩ base and emitter-base resistors are integrated on-chip, which means the UMB2NTN replaces two PNP transistors plus four external resistors with a single SOT-363 part. For a dual-channel load driver or a logic-level interface stage, that saves roughly 30 mm² of board area and eliminates four resistor placements from the pick-and-place bill. The Vce saturation is specified at 300mV max at 500µA base drive and 10mA collector current, which is typical for a pre-biased small-signal PNP.

Frequently asked questions

What is the closest functional equivalent to UMB2NTN?

The UMH2NTN is the NPN complement — same package, same resistor values (47kΩ each), same 50V / 100mA ratings, but with 2 NPN pre-biased transistors instead of PNP. For a direct PNP dual, the EMB2T2R shares the same parametric profile and package footprint.

Is UMB2NTN ROHS compliant?

Yes, the UMB2NTN is ROHS3 compliant.

What is the Vce and hFE of UMB2NTN?

The collector-emitter breakdown voltage (Vce) is 50V max. The DC current gain (hFE) is a minimum of 68 at 5mA collector current and 5V Vce.

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