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Infineon Technologies BCR10PNH6730 — Discrete Semiconductors

BCR10PNH6730 Infineon Dual Pre-Biased Transistor, 50V 100mA

MPNBCR10PNH6730
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Infineon BCR10PNH6730 dual pre-biased transistor, 1 NPN + 1 PNP, 50V VCEO, 100mA Ic, 10kΩ base and emitter-base resistors, 130MHz fT, SOT-363 package, 250mW power dissipation.

$0.0300Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

BCR10PNH6730 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type1 NPN, 1 PNP - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250mW
Frequency130MHz
PackageBulk
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)10kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Dual pre-biased transistor in a single SOT-363

The Infineon BCR10PNH6730 packs one NPN and one PNP pre-biased transistor into a 6-pin SOT-363 package (PG-SOT363-6-1). Each transistor has a 10kΩ resistor in series with the base and a 10kΩ resistor from base to emitter, so the bias network is already on-die. That eliminates two external resistors per transistor — four components saved in a single 2.9 mm² footprint. Collector-emitter breakdown is rated at 50V, continuous collector current at 100mA, and the transition frequency hits 130MHz, which covers general-purpose switching and driver stages up to low-MHz rates.

The 10kΩ base resistor (R1) and 10kΩ emitter-base resistor (R2) are matched on the same die, so the turn-on threshold and saturation behaviour are consistent across temperature without trimming. For a 5V logic drive, the base current is roughly (5V − 0.7V) / 10kΩ ≈ 430 µA, which with a minimum DC current gain of 30 at 5mA, 5V gives enough headroom to saturate the output at 10mA with a Vce(sat) of 300mV max. The built-in resistors also mean the part is self-biased off when the drive is open — the 100nA collector cutoff confirms leakage is negligible.

That means no last-time-buy window to chase, no end-of-life paperwork to file.

Frequently asked questions

Does BCR10PNH6730 have built-in resistors?

Yes. Each transistor includes a 10kΩ base resistor (R1) and a 10kΩ emitter-base resistor (R2) integrated on-chip. No external bias resistors are needed.