Toshiba Semiconductor
Toshiba RN1706,LF dual NPN pre-biased transistor, 50V VCEO, 100mA IC, 250MHz fT, built-in 4.7kΩ base resistor and 47kΩ emitter-base resistor, USV (5-TSSOP/SC-70-5/SOT-353) package, surface mount.
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| FET type | 2 NPN - Pre-Biased (Dual) |
| Voltage - collector emitter breakdown | 50V |
| Current - collector (Ic) | 100mA |
| Current - collector cutoff | 500nA |
| DC current gain (hFE) (Min) @ ic, vce | 80 @ 10mA, 5V |
| Power - max | 200mW |
| Frequency - transition | 250MHz |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 5-TSSOP, SC-70-5, SOT-353 |
| Resistor - base (R1) | 4.7kOhms |
| Resistor - emitter base (R2) | 47kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 250µA, 5mA |
The Toshiba RN1706,LF packs two NPN pre-biased transistors into a single 5-pin USV package (5-TSSOP / SC-70-5 / SOT-353). Each transistor integrates a 4.7 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), eliminating the need for external biasing resistors in switching and inverter applications. The 250 MHz transition frequency keeps switching edges clean for signals up to a few megahertz.
