Dual pre-biased transistor in a single ES6 package
The RN4911FE,LXHF(CT packs one NPN and one PNP pre-biased transistor into a single SOT-563 / SOT-666 package (supplier device package ES6), saving board space compared to two separate discretes. Each side integrates the base bias resistor (R1 = 10 kΩ) so the external BOM drops by two resistors per channel. Rated for 50 V collector-emitter breakdown and 100 mA continuous collector current, it handles low-side switching and level-shifting in 12 V and 24 V automotive loads. The 100 nA max collector cutoff keeps leakage negligible in off-state battery-powered modules.
AEC-Q101 qualification and reflow considerations
Listed under the Automotive, AEC-Q101 series, this part is qualified for automotive-grade stress and reliability — temperature cycling, high-temperature reverse bias, and ESD robustness per the AEC-Q101 test suite. The 100 mW power dissipation limit means the junction temperature stays within the automotive ambient range when the duty cycle is accounted for in the PCB copper area under the ES6 footprint. The ES6 package (SOT-563 / SOT-666) is a standard 6-lead small-outline transistor package with 0.5 mm lead pitch. It reflows on a standard lead-free profile with a peak temperature of 260 °C. No special bake is required if the moisture barrier bag is intact and the floor life has not been exceeded — check the MSL rating on the reel label before the first reflow pass.
Gain, saturation, and switching speed
The Vce saturation voltage is 300 mV max at Ic = 5 mA, Ib = 250 µA, keeping conduction loss low in the on-state. Transition frequencies of 200 MHz (NPN) and 250 MHz (PNP) mean the part switches well above the PWM frequencies used in automotive solenoid and relay drivers — the 10 kΩ base resistor limits the turn-on speed more than the transistor itself.