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BCR133SB6327XT

Infineon BCR133SB6327XT Dual NPN Pre-Biased Transistor

MPNBCR133SB6327XT
End of Life

Infineon BCR133SB6327XT dual NPN pre-biased transistor array, 50V Vce, 100mA Ic, 130MHz fT, 10k base/emitter resistors, SOT-363 package, 250mW power dissipation.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BCR133SB6327XT specifications
ParameterValue
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
DC current gain (hFE) (Min) @ ic, vce30 @ 5mA, 5V
Power - max250mW
Frequency - transition130MHz
PackageTape & Reel (TR)
Case6-VSSOP, SC-88, SOT-363
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)10kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Two NPNs with the bias resistors built in

The Infineon BCR133SB6327XT packs two NPN transistors into a single SOT-363 package, each with a 10k series base resistor and a 10k emitter-base resistor already integrated. That means you skip the two external resistors per channel — four parts gone from the BOM. The 250 mW power dissipation ceiling covers both transistors combined, so check the thermal budget if both channels run near the limit simultaneously.

Where you'd use a dual pre-biased pair

This part is a natural fit for inverter or driver stages where you need two independent switching channels — think relay or LED drivers, logic-level translators, or simple gate drive for a small MOSFET. The integrated resistors set a fixed base current, so the transistor saturates predictably without extra calculation. The 300 mV Vce saturation at 500 µA base and 10 mA collector is tight enough for low-drop switching at modest loads.

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Frequently asked questions

Does BCR133SB6327XT have a base resistor value of 10k ohms?

Yes, both the base resistor (R1) and the emitter-base resistor (R2) are 10k ohms each.