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Infineon Technologies BCR 148 B6327 — Discrete Semiconductors

Infineon BCR 148 B6327 NPN Pre-Biased Transistor, 100 mA

MPNBCR 148 B6327
End of Life

Infineon BCR 148 B6327 NPN pre-biased transistor, 50 V VCEO, 100 mA Ic, 100 MHz transition frequency, 47 kOhm base and emitter-base resistors, SOT-23-3 package, Tape & Reel.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BCR 148 B6327 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max200 mW
Frequency - transition100 MHz
PackageTape & Reel (TR)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)47 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

It integrates two 47 kOhm resistors — one in series with the base (R1) and one between base and emitter (R2) — so you can use it as a simple switch or inverter without external bias components.

Built-in resistors save board space and BOM count

The 47 kOhm base resistor (R1) and 47 kOhm emitter-base resistor (R2) eliminate the need for two external passives per transistor. That matters when you are populating a dense PCB with multiple switching stages — fewer components, fewer placement errors, and a cleaner layout. The pre-biased configuration also guarantees a defined off-state with the base pulled low through R2, which simplifies the drive design.

That is a widely used footprint that pick-and-place machines handle without special tooling.

Frequently asked questions

What are the built-in resistor values for BCR 148 B6327?

Both the base resistor (R1) and the emitter-base resistor (R2) are 47 kOhms.