Dual NPN pre-biased pair in SOT-353
The Toshiba RN1704,LF packs two NPN transistors with integrated bias resistors into a single SOT-353 (USV) package. Each transistor has a 47 kΩ base resistor (R1) and a 47 kΩ base-emitter resistor (R2), so the pair is ready for digital switching or level translation without external resistor networks. Collector-emitter breakdown is rated at 50 V, continuous collector current at 100 mA, and the 250 MHz transition frequency keeps edges clean in low-speed logic or small-signal RF buffers. Total package dissipation is 200 mW.
Pre-biased means fewer passives on the board
The 47 kΩ R1 and R2 set the base current and turn-off threshold — the transistor saturates with about 250 µA base drive for 5 mA collector current, and the 300 mV Vce(sat) at that point means low dissipation in the on-state. The 500 nA cutoff leakage keeps off-state current negligible in battery-powered or high-impedance nodes. DC current gain is a minimum of 80 at 10 mA, 5 V, so the part drives loads like small relays, LED indicators, or logic inputs without a separate driver stage.