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STMicroelectronics STFW Series

16 variants · STMicroelectronics

About the STMicroelectronics STFW Series

The STMicroelectronics STFW Series series groups 16 related part numbers, each listed with full specifications, a datasheet where available, and an RFQ option. Every variant in the range shares a common case of TO-3P-3 Full Pack, drive voltage (Max rds on, min rds on) of 10V and FET feature of -. Variants differ by current - continuous drain (Id) @ 25°C, drain to source voltage and gate charge (Qg) (Max) @ vgs, so you can match the exact current - continuous drain (Id) @ 25°C your application requires using the selection guide below. The range mixes active and legacy part numbers, so you can source both current STMicroelectronics STFW Series variants and discontinued ones from a single page.

Select a variant by

Current - continuous drain (Id) @ 25°C
1.4A (Tc) · 2A (Tc) · 2.5A (Tc) · 2.6A (Tc) · 4A (Tc) · 12A (Tc) · 18A (Tc) · 30A (Tc) · 34A (Tc) · 35A (Tc)
Drain to source voltage
600 V · 650 V · 1050 V · 1200 V · 1500 V · 1700 V
Gate charge (Qg) (Max) @ vgs
10 nC @ 10 V · 13 nC @ 10 V · 29 nC @ 10 V · 29.3 nC @ 10 V · 36 nC @ 10 V · 44 nC @ 10 V · 44.2 nC @ 10 V · 50 nC @ 10 V · 55 nC @ 10 V · 57 nC @ 10 V · 71 nC @ 10 V · 82 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds
115 pF @ 100 V · 180 pF @ 100 V · 939 pF @ 25 V · 1060 pF @ 100 V · 1100 pF @ 100 V · 1300 pF @ 25 V · 1370 pF @ 100 V · 1434 pF @ 100 V · 2370 pF @ 100 V · 2500 pF @ 100 V · 3000 pF @ 100 V · 3470 pF @ 100 V
Operating temperature
-55°C ~ 150°C (TJ) · -55°C~150°C(TJ) · 150°C (TJ)
Power dissipation
20W (Tc) · 30W (Tc) · 48W (Tc) · 57W (Tc) · 63W (Tc)
Rds on (Max) @ id, vgs
7Ohm @ 2A, 10V · 8Ohm @ 750mA, 10V · 9Ohm @ 1.3A, 10V · 11Ohm @ 600mA, 10V · 13Ohm @ 1.3A, 10V · 78mOhm @ 17.5A, 10V · 87mOhm @ 17A, 10V · 88mOhm @ 17A, 10V · 95mOhm @ 15A, 10V · 190mOhm @ 9A, 10V · 690mOhm @ 6A, 10V

Shared specifications

Case
TO-3P-3 Full Pack
Drive voltage (Max rds on, min rds on)
10V
FET feature
-
FET type
N-Channel
Mounting
Through Hole
Package
Tube
Technology
MOSFET (Metal Oxide)

Variant comparison

ParameterSTFW12N120K5STFW1N105K3STFW20N65M5STFW24N60M2STFW2N105K5STFW38N65M5
Current - continuous drain (Id) @ 25°C12A (Tc)1.4A (Tc)18A (Tc)18A (Tc)2A (Tc)30A (Tc)
Drain to source voltage1200 V1050 V650 V600 V1050 V650 V
Gate charge (Qg) (Max) @ vgs44.2 nC @ 10 V13 nC @ 10 V36 nC @ 10 V29 nC @ 10 V10 nC @ 10 V71 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1370 pF @ 100 V180 pF @ 100 V1434 pF @ 100 V1060 pF @ 100 V115 pF @ 100 V3000 pF @ 100 V
Operating temperature-55°C~150°C(TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C~150°C(TJ)-55°C~150°C(TJ)150°C (TJ)
Power dissipation63W (Tc)20W (Tc)48W (Tc)48W (Tc)30W (Tc)57W (Tc)
Rds on (Max) @ id, vgs690mOhm @ 6A, 10V11Ohm @ 600mA, 10V190mOhm @ 9A, 10V190mOhm @ 9A, 10V8Ohm @ 750mA, 10V95mOhm @ 15A, 10V

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