STFW3N150

STMicroelectronics

STMicroelectronics PowerMESH N-channel MOSFET, STFW3N150, 1500 V drain-source, 2.5 A continuous drain, 9 ohm Rds(on) at 1.3 A, 10 V gate drive, TO-3P-3 Full Pack through-hole package, 150°C junction temperature.

STMicroelectronics STFW3N150
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[IN STOCK] In Stock: 10,473 pcs
$1.96/ pc

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Technical specifications

STFW3N150 specifications
Parameter / AttributeSpecification / Value
SeriesPowerMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.5A (Tc)
Power dissipation63W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs9Ohm @ 1.3A, 10V
Gate charge (Qg) (Max) @ vgs29.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds939 pF @ 25 V

Technical details

High-voltage switching workhorse in a fully isolated package

Typical applications include high-voltage power supplies, AC-DC converters, and inverter stages in industrial and consumer equipment where the 1500 V blocking voltage gives substantial margin for 400 V or 600 V bus rails.

At 1 A continuous drain, expect roughly 9 W dissipation from the channel alone, which against the 63 W package limit at case temperature leaves thermal headroom for a modest heatsink in still air.

Active lifecycle — stable supply for production

This makes the part a reliable choice for production BOMs where long-term availability matters.

STFW3N150
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