STFW8N120K5

STMicroelectronics

STMicroelectronics MDmesh™ K5 series, N-Channel MOSFET, 1200 V drain-source, 6 A continuous drain, 2 Ohm on-resistance at 10 V gate drive, TO-3P-3 Full Pack through-hole package, -55 to 150 °C junction temperature.

STMicroelectronics STFW8N120K5
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[IN STOCK] In Stock: 202 pcs
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Technical specifications

STFW8N120K5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation48W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs2Ohm @ 2.5A, 10V
Gate charge (Qg) (Max) @ vgs13.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds505 pF @ 100 V

Technical details

1200 V N-channel MOSFET — the high-voltage switching workhorse

The STFW8N120K5: Gate charge is 13.7 nC at 10 V.

At 2.5 A load, the 2 Ohm on-resistance drops about 12.5 W of conduction loss. The 48 W power dissipation ceiling (at case temperature) gives roughly 3.8x headroom at that current, so the part runs cool with a reasonable heatsink.

Package and mounting — TO-3PF through-hole

The TO-3PF is a fully isolated through-hole package — the metal tab is electrically isolated from the die, so no insulating pad is needed between the package and the heatsink.

STFW8N120K5
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