STMicroelectronics MDmesh™ M5 series, N-Channel MOSFET, 650 V drain-source, 18 A continuous drain, 190 mOhm Rds(on) at 10 V gate drive, TO-3PF through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M5 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 18A (Tc) |
| Power dissipation | 48W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-3P-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 190mOhm @ 9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 36 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1434 pF @ 100 V |
Input capacitance is 1434 pF at 100 V drain-source. In a TO-3PF full-pack package, the backside is electrically isolated, simplifying heatsink attachment without an insulating pad.
The STFW20N65M5 is supplied in a TO-3PF through-hole package. The full-pack moulding isolates the tab, so the heatsink interface does not require an additional isolation washer.
The STFW20N65M4 is a related part in the same series, but pin compatibility and parametric differences should be verified against the datasheets before substitution.