600 V N-channel MOSFET in the MDmesh™ II Plus family
The STFW40N60M2 is a 600 V N-channel power MOSFET from STMicroelectronics' MDmesh™ II Plus series, built on a strip-layout vertical DMOS process that reduces on-resistance per unit area. The TO-3P-3 Full Pack package provides full isolation from the heatsink, eliminating the need for a separate insulating pad in high-voltage power stages.
With a maximum Rds(on) of 88 mOhm at Vgs=10 V, conduction loss at 17 A is under 26 W at the hot corner after temperature derating — the typical Rds(on) at 150°C junction is roughly 1.6× the 25°C value, so budget 140 mOhm worst-case for thermal design. Total gate charge Qg is 57 nC at 10 V, which translates to a gate-drive current of about 570 mA to switch at 100 kHz. The input capacitance Ciss is 2500 pF at Vds=100 V, a moderate figure that keeps the Miller plateau manageable with a standard totem-pole driver.
Package and mounting — TO-3PF full-pack
The TO-3P-3 Full Pack (TO-3PF) through-hole package has an isolated backside tab — no insulating washer is required between the device and the heatsink, simplifying assembly and reducing thermal interface resistance. The mounting hole pattern is standard for the TO-3P outline; the supplier device package code is TO-3PF. Power dissipation is rated at 63 W at case temperature Tc, a realistic ceiling for a single device in a forced-air or large-fin heatsink.
The 150°C max junction is the thermal limit for power dissipation budgeting — derate the 63 W (Tc) figure linearly above 25°C case temperature per the datasheet curve. The wide Tj range also supports cold-start conditions down to -55°C, relevant for outdoor telecom and engine-bay applications.