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STMicroelectronics STFW3N170 — Discrete Semiconductors

STFW3N170 N-Channel MOSFET, 1700 V, 2.6 A, TO-3PF

MPNSTFW3N170
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STMicroelectronics PowerMESH™ N-Channel MOSFET, STFW3N170, 1700 V Vdss, 2.6 A continuous drain, 13 Ohm Rds(on) at 10 V, TO-3PF through-hole package, -55 to 150 °C junction temperature.

$6.0700Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STFW3N170 specifications
ParameterValue
SeriesPowerMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1700 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C2.6A (Tc)
Power dissipation63W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs13Ohm @ 1.3A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1100 pF @ 100 V

Product details

That 1700 V rating puts it squarely in the high-voltage offline conversion space — think flyback and forward converters in industrial power supplies, auxiliary supplies for three-phase motor drives, and solar microinverter stages where the DC bus sits at 600–1000 V and you need margin for switching transients. The 13 Ohm maximum Rds(on) at 10 V gate drive is the number to budget for conduction loss; at 1.3 A test current the drop is about 17 V, so this is a device sized for a few hundred milliamps of real load when you factor in the 63 W dissipation ceiling and the junction temperature derating.

Gate drive and threshold — not a logic-level part

The maximum gate-source voltage is ±30 V, which gives some headroom for ringing on a long gate trace, but you still want a gate resistor and a zener clamp if the drive transformer or bootstrap supply can overshoot. Gate charge is 44 nC at 10 V, so the driver needs to source and sink that charge fast enough to keep switching losses under control at the target frequency.

Package and thermal — TO-3PF full-pack

The STFW3N170 comes in a TO-3P-3 Full Pack (TO-3PF) through-hole package. The junction temperature range is -55 to 150 °C, covering industrial and some automotive under-hood environments. Input capacitance is 1100 pF at 100 V drain-source, which is modest and keeps the drive power reasonable.

Frequently asked questions

What is the Rds(on) of STFW3N170?

That is the number to use for worst-case conduction loss calculations.

Is STFW3N170 a logic-level MOSFET?

No. The gate threshold voltage can be as high as 5 V, and the rated Rds(on) is specified at 10 V gate drive.