STMicroelectronics STFW6N120K3 SuperMESH3 N-channel MOSFET, 1200 V drain-source, 6 A continuous drain, 2.4 Ohm Rds(on) at 2.5 A, 10 V, 34 nC gate charge, TO-3PF full-pack through-hole, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | SuperMESH3™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 1200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 63W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-3P-3 Full Pack |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 2.4Ohm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 34 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1050 pF @ 100 V |
The STFW6N120K3: Rated 1200 V drain-source, 6 A continuous drain, 2.4 Ohm Rds(on) at 2.5 A, 10 V.
Total gate charge is 34 nC at 10 V. Input capacitance is 1050 pF at 100 V drain-source.
STMicroelectronics lists the STFW6N120K3 as obsolete. Any stock offered should be verified against the original date code and ST's last-time-buy window to avoid counterfeits.
Yes, STMicroelectronics lists the STFW6N120K3 as obsolete. Any replacement must be evaluated for pin-compatibility and parametric fit — no direct drop-in is documented by ST.