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STFW12N120K5

STFW12N120K5 N-Channel 1200 V MOSFET, 12 A, TO-3PF

MPNSTFW12N120K5
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STMicroelectronics MDmesh™ K5 series, STFW12N120K5, N-Channel MOSFET, 1200 V drain-source, 12 A continuous, 690 mOhm Rds(on) at 6 A, 10 V, 44.2 nC gate charge, TO-3P-3 Full Pack through-hole, -55°C to 150°C junction.

$13.0100Ref. price · indicative, final on quote
STMicroelectronics STFW12N120K5 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STFW12N120K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage1200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation63W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3 Full Pack
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs690mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs44.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1370 pF @ 100 V

Product details

1200 V N-channel in a full-pack TO-3PF

The TO-3P-3 Full Pack through-hole package provides full isolation from the heatsink — no insulating pad needed, which simplifies mounting and improves thermal coupling to the case. Gate charge is 44.2 nC at 10 V, keeping switching losses manageable for a 1200 V device.

The 690 mOhm Rds(on) at 6 A, 10 V is the figure to use for conduction-loss budgeting at typical operating current. At lower gate voltages the resistance climbs — the drive voltage spec of 10 V for minimum Rds(on) means a 12 V gate-drive rail is the practical choice. Input capacitance of 1370 pF at 100 V drain-source gives a reasonable Miller plateau for a medium-speed switch; expect clean switching up to the 100 kHz range with a proper gate-driver IC.

Frequently asked questions

Is STFW12N120K5 obsolete?

There is no indication of discontinuation or last-time-buy, so it remains suitable for production BOMs and new designs.

What is the Rds(on) of STFW12N120K5?

Maximum on-resistance is 690 mOhm at 6 A drain current with 10 V gate-to-source drive. This is the rated value for conduction-loss calculations at the specified test condition.

How does STFW12N120K5 compare to STW12N120K5?

The STW12N120K5 is the standard TO-247 package variant of the same MDmesh K5 die. Electrical ratings — 1200 V, 12 A, 690 mOhm Rds(on) — are identical. The choice is purely mechanical: TO-247 for standard isolated mounting with a pad, TO-3PF for direct-to-heatsink isolation.