STFW69N65M5

STMicroelectronics · MDmesh™ V Series

STMicroelectronics MDmesh™ V, N-Channel MOSFET, 650 V Vdss, 58 A Id, 45 mOhm Rds(on) at 10 V, 143 nC Qg, TO-3P-3 Full Pack (TO-3PF), Through Hole, 150°C TJ.

STMicroelectronics STFW69N65M5
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Technical specifications

STFW69N65M5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C58A (Tc)
Power dissipation79W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs45mOhm @ 29A, 10V
Gate charge (Qg) (Max) @ vgs143 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6420 pF @ 100 V

Technical details

650 V N-channel in a full-pack through-hole package

It is housed in a TO-3P-3 Full Pack (TO-3PF) through-hole package, which provides full isolation from the heatsink — no insulating pad or washer is needed, simplifying mechanical assembly and improving thermal transfer to the heatsink.

Conduction and switching losses — what the numbers mean

The 143 nC total gate charge at 10 V tells the gate driver how much current it must source to hit the target switching frequency — a 143 nC gate switched at 50 kHz draws about 7.2 mA average from the driver, well within the capability of most half-bridge gate-driver ICs. The device is specified for a 10 V drive for minimum Rds(on), which is standard for super-junction MOSFETs.

Package and mounting — the full-pack advantage

The TO-3PF (TO-3P Full Pack) package has a fully isolated backside, so the device can be bolted directly to a grounded or shared heatsink without an insulating pad. The through-hole leads handle the 58 A continuous drain current and the 79 W maximum power dissipation — the limiting factor is the heatsink's thermal resistance, not the package itself.

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