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STMicroelectronics STFW69N65M5 — Discrete Semiconductors

STFW69N65M5 MOSFET, 650 V, 58 A, 45 mOhm, TO-3PF

MPNSTFW69N65M5
Active

STMicroelectronics MDmesh™ V, N-Channel MOSFET, 650 V Vdss, 58 A Id, 45 mOhm Rds(on) at 10 V, 143 nC Qg, TO-3P-3 Full Pack (TO-3PF), Through Hole, 150°C TJ.

$13.5400Ref. price · indicative, final on quote
PackagingTO-3P-3 Full Pack
RoHSROHS3 Compliant
SeriesMDmesh™ V
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STFW69N65M5 specifications
ParameterValue
SeriesMDmesh™ V
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C58A (Tc)
Power dissipation79W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-3P-3 Full Pack
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs45mOhm @ 29A, 10V
Gate charge (Qg) (Max) @ vgs143 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6420 pF @ 100 V

Product details

650 V N-channel in a full-pack through-hole package

It is housed in a TO-3P-3 Full Pack (TO-3PF) through-hole package, which provides full isolation from the heatsink — no insulating pad or washer is needed, simplifying mechanical assembly and improving thermal transfer to the heatsink.

Conduction and switching losses — what the numbers mean

The 143 nC total gate charge at 10 V tells the gate driver how much current it must source to hit the target switching frequency — a 143 nC gate switched at 50 kHz draws about 7.2 mA average from the driver, well within the capability of most half-bridge gate-driver ICs. The device is specified for a 10 V drive for minimum Rds(on), which is standard for super-junction MOSFETs.

Package and mounting — the full-pack advantage

The TO-3PF (TO-3P Full Pack) package has a fully isolated backside, so the device can be bolted directly to a grounded or shared heatsink without an insulating pad. The through-hole leads handle the 58 A continuous drain current and the 79 W maximum power dissipation — the limiting factor is the heatsink's thermal resistance, not the package itself.

Frequently asked questions

What is the equivalent of STFW69N65M5?

The MDmesh™ V series includes other voltage and current variants, but a direct functional replacement would require matching the 650 V Vdss, 58 A Id, 45 mOhm Rds(on), and TO-3PF package. Check the ST product portfolio for other MDmesh V parts in the same package.