650 V N-channel in a full-pack through-hole package
The STMicroelectronics STFW69N65M5 is a 650 V, 58 A N-channel power MOSFET from the MDmesh™ V super-junction family. It is housed in a TO-3P-3 Full Pack (TO-3PF) through-hole package, which provides full isolation from the heatsink — no insulating pad or washer is needed, simplifying mechanical assembly and improving thermal transfer to the heatsink.
Conduction and switching losses — what the numbers mean
The 143 nC total gate charge at 10 V tells the gate driver how much current it must source to hit the target switching frequency — a 143 nC gate switched at 50 kHz draws about 7.2 mA average from the driver, well within the capability of most half-bridge gate-driver ICs. The 6420 pF input capacitance at 100 V drain-source is a typical figure for a die of this current class; the gate driver must supply the peak current to charge Ciss during the Miller plateau. The device is specified for a 10 V drive for minimum Rds(on), which is standard for super-junction MOSFETs.
The part is ROHS3 compliant, meeting the latest EU restriction directive.
Package and mounting — the full-pack advantage
The TO-3PF (TO-3P Full Pack) package has a fully isolated backside, so the device can be bolted directly to a grounded or shared heatsink without an insulating pad. The through-hole leads handle the 58 A continuous drain current and the 79 W maximum power dissipation — the limiting factor is the heatsink's thermal resistance, not the package itself. The 150 °C maximum junction temperature gives headroom for transient overloads in a well-ventilated enclosure.