650 V, 46 A N-channel MOSFET — MDmesh V generation
The device is packaged in a through-hole TO-3PF with a fully isolated tab, simplifying heatsink attachment and eliminating the need for an insulating pad in many assemblies.
59 mOhm on-resistance and gate charge — switching loss trade-off
These numbers indicate a device that balances on-resistance with moderate switching energy — suitable for hard-switched topologies like power-factor correction (PFC) stages and primary-side switches in AC-DC converters where conduction loss dominates the thermal budget.
For existing BOM lines, procurement must rely on independent distribution channels for remaining inventory or qualified surplus stock.
The TO-3PF is a through-hole, fully isolated package rated for a maximum power dissipation of 79 W at case temperature. The full-pack construction means the metal back is electrically isolated, which simplifies mounting to a heatsink without an additional insulator. The maximum junction temperature is 150°C. For continuous operation near the 46 A rating, a substantial heatsink and forced airflow are typically required to keep the junction within limits.