STMicroelectronics MDmesh™ M2 series, STD12N65M2, N-Channel MOSFET, 650 V Vdss, 8 A continuous drain, 500 mOhm Rds(on) at 4 A 10 V, 16.5 nC gate charge, DPAK package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M2 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 8A (Tc) |
| Power dissipation | 85W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 500mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 16.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 535 pF @ 100 V |
Total gate charge is 16.5 nC at 10 V gate drive — low enough that a standard PWM controller with a 1 A peak gate-drive output can switch this MOSFET at 100 kHz without excessive cross-conduction losses.
The DPAK (TO-252) surface-mount package with a single exposed tab requires a copper-land area on the PCB for thermal dissipation — the 85 W power dissipation rating assumes the tab is soldered to a sufficient pad.
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