STMicroelectronics · MDmesh™ M2 Series
STMicroelectronics MDmesh™ M2 series, STB33N65M2, N-Channel MOSFET, 650 V Vdss, 24 A Id, 140 mOhm Rds(on) at 10 V, D²PAK (TO-263), Surface Mount.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ M2 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 24A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 140mOhm @ 12A, 10V |
| Gate charge (Qg) (Max) @ vgs | 41.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1790 pF @ 100 V |
The STB33N65M2 comes in the TO-263 (D²PAK) package, a surface-mount variant of the TO-220. For the full 190 W dissipation at case temperature, the board must provide a low-thermal-impedance path — a multi-layer board with thermal vias under the tab is the standard approach.
It is ROHS3 compliant.
