STMicroelectronics MDmesh™ M2 series, STB33N65M2, N-Channel MOSFET, 650 V Vdss, 24 A Id, 140 mOhm Rds(on) at 10 V, D²PAK (TO-263), Surface Mount.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M2 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 24A (Tc) |
| Power dissipation | 190W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 140mOhm @ 12A, 10V |
| Gate charge (Qg) (Max) @ vgs | 41.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1790 pF @ 100 V |
The STB33N65M2 comes in the TO-263 (D²PAK) package, a surface-mount variant of the TO-220. For the full 190 W dissipation at case temperature, the board must provide a low-thermal-impedance path — a multi-layer board with thermal vias under the tab is the standard approach.
It is ROHS3 compliant.
Buyers need complete technical specs to validate fit.
Availability directly affects purchase decision and lead time.
Cost is a key factor for sourcing and budget planning.
For cross-referencing or finding alternatives for design flexibility.
Engineers need to know compatibility for substitution.
Directs buyers to authorized distributors for genuine parts.