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STMicroelectronics STD12N50M2 — Discrete Semiconductors

STD12N50M2 MOSFET N-Ch 500V 10A DPAK, MDmesh M2

MPNSTD12N50M2
Active

STMicroelectronics STD12N50M2, MDmesh™ M2 series, N-Channel MOSFET, 500 V, 10 A, DPAK, Tape & Reel.

$1.6000Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesMDmesh™ M2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

STD12N50M2 specifications
ParameterValue
SeriesMDmesh™ M2
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation85W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR) Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs380mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds550 pF @ 100 V

Product details

500 V blocking in a DPAK footprint

The STD12N50M2: The 380 mOhm maximum on-resistance at 5 A, 10 V gate drive keeps conduction losses manageable in a DPAK package that dissipates up to 85 W.

Switching and drive budget

Gate charge totals 15 nC at 10 V, so a typical gate driver sourcing 1 A can switch the FET in about 15 ns — fast enough for 100 kHz hard-switched converters without excessive cross-conduction. Input capacitance is 550 pF at 100 V drain bias, which sets the Miller plateau charge and the switching loss in a half-bridge leg.

Thermal and mechanical fit

Housed in a TO-252 (DPAK) surface-mount package, the part suits automated pick-and-place assembly.

Sourcing and compliance

STMicroelectronics lists the STD12N50M2 as an active product with no end-of-life notification. It is RoHS3 compliant (2011/65/EU + 2015/863). Available in Tape & Reel (TR) and Cut Tape (CT) options for volume or prototype quantities.