STMicroelectronics MDmesh M2 N-channel MOSFET, 650 V Vdss, 10 A continuous drain, 430 mΩ Rds(on), TO-220-3 Full Pack (TO-220FP), tube.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 430mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 590 pF @ 100 V |
The STF13N65M2: It comes in the TO-220-3 Full Pack (TO-220FP) — the moulded full-pack body isolates the backside tab electrically, so the device mounts directly to a heatsink without a thermal pad or mica insulator.
Maximum power dissipation is 25 W at the case, and the junction temperature ceiling is 150 °C.
The STF12N65M2 is the nearest sibling within the MDmesh M2 family. Both are 650 V N-channel MOSFETs in the TO-220FP package. The STF13N65M2 carries 10 A continuous drain current with 430 mΩ Rds(on); the STF12N65M2 is rated for 8 A with 500 mΩ Rds(on). The STF13N65M2 delivers roughly 25 % more current capability at lower on-resistance in the same footprint.