STMicroelectronics MDmesh™ M2 N-Channel MOSFET, STD13N65M2, 650 V Vdss, 10 A Id, 430 mOhm Rds(on), DPAK surface mount.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M2 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | 150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 430mOhm @ 5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 590 pF @ 100 V |
The STD13N65M2: Rated power dissipation is 110 W at the case, but the real limit is set by the board's thermal resistance; a 1-inch-square copper pad on a 2-layer board typically derates to 2–3 W continuous without forced air.
The ±25 V maximum gate-source rating provides margin against ringing on the gate node in hard-switching topologies like flyback or PFC.
The maximum junction temperature is 150 °C.