The STB28N65M2 is a 650 V, 20 A N-channel power MOSFET from ST's MDmesh M2 super-junction family, housed in a D²PAK (TO-263) surface-mount package. Gate-drive voltage is specified at 10 V for the rated Rds(on); the device accepts up to ±25 V on the gate.
Switching-loss numbers — 35 nC Qg in context
At 100 kHz, that's 35 nC × 10 V × 100 kHz = 35 mW — negligible for the driver, but the real benefit is the low Miller plateau charge that shortens the switching transition and reduces turn-on/turn-off losses in the FET itself. Compared to earlier MDmesh M2 devices at similar voltage and current ratings, the STB28N65M2's 180 mOhm Rds(on) and 35 nC Qg represent a balanced figure-of-merit that suits both conduction-loss-sensitive (low-frequency) and switching-loss-sensitive (high-frequency) designs.
The D²PAK (TO-263) footprint is a common surface-mount power package shared across ST's MDmesh M2 and M5 series, as well as competitors' 650 V parts. If a second-source requirement emerges later, the package and pinout (gate, drain, source with tab as drain) are standard — any 650 V N-channel in D²PAK with similar Rds(on) and Qg will be a drop-in candidate for revalidation.
Layout and thermal — D²PAK mounting notes
For a 170 W dissipation capability, the PCB pad should be tied to a sufficient copper area.
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