Infineon Technologies S26KL256SDABHN030 — Memory (DRAM / SRAM / Flash / EEPROM)
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Infineon Technologies / Memory (DRAM / SRAM / Flash / EEPROM)

Infineon S26KL256SDABHN030 HyperFlash™ KL 256Mbit, 96 ns

MPN S26KL256SDABHN030
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Infineon Technologies HyperFlash™ KL parallel NOR Flash, S26KL256SDABHN030, 256Mbit, 96 ns access time, 100 MHz, 2.7 V, -40 to +125°C, 24-FBGA.

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[SPEC] Essential Parameters Snapshot Full Specifications (13)
Supply Voltage 2.7

Full Technical Specifications

13 Parameters
S26KL256SDABHN030 specifications
Parameter / AttributeSpecification / Value
SeriesHyperFlash™ KL
InterfaceParallel
MountingSurface Mount
Operating temperature high-40°C to 125°C (TA)
Frame_size256Mbit
Access time96 ns
Memory typeNon-Volatile
Frequency100000000.0
Package_typeTray
Memory formatFLASH
StatusActive
Supply voltage2.7
Memory organization32M x 8
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Technical Details & Description

96 ns access at 100 MHz — what the timing means for the bus

The S26KL256SDABHN030: The 96 ns access time and 100 MHz maximum operating frequency set the read throughput ceiling. At 100 MHz the parallel interface delivers a burst read rate that keeps a Cortex-M or RISC-V core fed without wait-state insertion on each fetch, provided the controller's memory controller matches the HyperFlash protocol.

24-ball FBGA — board-level integration note

Housed in a 24-ball FBGA package, the S26KL256SDABHN030 is a surface-mount parallel NOR Flash. The 0.80 mm ball pitch requires a standard PCB land pattern; the package's low profile keeps the seated height under 1.2 mm, which fits mezzanine or stacked-board assemblies. The parallel interface uses a multiplexed address/data bus — the HyperFlash protocol reduces pin count compared to traditional parallel NOR, but the controller must support the HyperBus command set. Confirm the host memory controller's HyperBus compatibility before layout.

S26KL256SDABHN030
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