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IPB60R055CFD7ATMA1 - Infineon Technologies
MPN IPB60R055CFD7ATMA1
End of Life
Spot Stock · 24-48h Dispatch
100% Original Sealed
MOSFET N-CH 650V 38A TO263-3-2
In Stock: 976 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$9.31 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$9.31
10+ pcs
$8.38
30+ pcs
$7.63
100+ pcs
$6.89
500+ pcs
$6.42
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[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output / Current 650 V
Full Technical Specifications
16 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Series | CoolMOS™ CFD7 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 38A (Tc) |
| Power dissipation | 178W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4.5V @ 900µA |
| Rds on (Max) @ id, vgs | 55mOhm @ 18A, 10V |
| Gate charge (Qg) (Max) @ vgs | 79 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3194 pF @ 400 V |
Series Sibling Variants
Infineon Technologies CoolMOS™ CFD7 Series Models
Sibling variants, package options, and speed/density grades in this Infineon Technologies semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
IPA60R170CFD7XKSA1
Infineon CoolMOS™ CFD7 series, IPA60R170CFD7XKSA1, N-channel MOSFET, 650 V Vdss, 8 A continuous drain, 170 mOhm Rds(on) at 10 V, PG-TO220-FP full-pack package, -55°C to 150°C.
View Availability & Specs
IPA60R280CFD7XKSA1
Infineon Technologies CoolMOS™ CFD7 N-Channel MOSFET, 650 V Vdss, 6 A Id, 280 mOhm Rds(on), TO-220-3 Full Pack, Tube.
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IPB60R040CFD7ATMA1
Infineon CoolMOS™ CFD7 series, IPB60R040CFD7ATMA1, N-Channel MOSFET, 650 V drain-source, 50 A continuous drain, 40 mOhm Rds(on) at 10 V gate drive, 108 nC gate charge, PG-TO263-3-2 package, -55 to 150 °C junction temperature.
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IPB60R090CFD7ATMA1
MOSFET N-CH 650V 25A TO263-3-2
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IPD60R145CFD7ATMA1
Infineon CoolMOS™ CFD7 series, N-Channel MOSFET, 600 V Vdss, 145 mOhm Rds(on) @ 6.8 A, 10 V, 16 A continuous drain current, DPAK (TO-252) surface mount, -55°C to 150°C junction temperature.
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IPD60R210CFD7ATMA1
Infineon CoolMOS™ CFD7, N-Channel MOSFET, 600 V Vdss, 12 A continuous drain, 210 mOhm Rds(on) at 10 V, 23 nC gate charge, DPAK (TO-252), -55°C to 150°C junction temperature.
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IPB60R055CFD7ATMA1
Verified Allocation