Infineon CoolMOS™ CFD7, N-Channel MOSFET, 600 V Vdss, 12 A continuous drain, 210 mOhm Rds(on) at 10 V, 23 nC gate charge, DPAK (TO-252), -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CFD7 |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 64W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-4, DPak (3 Leads + Tab) |
| Vgs(th) (Max) @ id | 4.5V @ 240µA |
| Rds on (Max) @ id, vgs | 210mOhm @ 4.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 23 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1015 pF @ 400 V |
The IPD60R210CFD7ATMA1 is a 600 V, 12 A N-channel MOSFET in a DPAK (TO-252) package.
Total gate charge is 23 nC at 10 V gate drive. Input capacitance Ciss is 1015 pF at 400 V drain-source.
Housed in a DPAK (TO-252) with three leads plus the exposed tab. The PCB copper area under the tab sets the junction-to-ambient thermal resistance.
No official successor or replacement part is listed. The IPD50R950CEAUMA1 is a different voltage (500 V) and on-resistance (950 mOhm) class and is not a functional substitute. For a cross-reference, confirm the circuit's voltage and current requirements against the 600 V, 12 A, 210 mOhm ratings of this part.
Yes, it is listed as ROHS3 Compliant.