650 V N-channel MOSFET in a full-pack — the selection rationale
The 650 V drain-source rating gives a 50 V safety margin over the typical 600 V bus in a PFC or flyback converter, which matters when the reflected voltage or leakage spike pushes the drain above 600 V.
Gate drive and switching — what the numbers tell you
Gate charge totals 28 nC at 10 V drive. The ±20 V maximum gate rating leaves room for a 15 V drive rail without clamping. Input capacitance is 1199 pF at 400 V drain bias, which means the Miller plateau duration is modest; expect clean switching with a 10 Ω to 22 Ω gate resistor. The 4.5 V maximum gate threshold at 300 µA drain current confirms the device is fully enhanced at 10 V, but it will not turn on reliably with a 3.3 V gate signal — the threshold is above that level.
Package and thermal — the full-pack advantage
The PG-TO220-FP (full-pack) package has the metal tab fully encapsulated in epoxy, so the tab is electrically isolated from the drain. The maximum power dissipation is 26 W at case temperature 25 °C; at 8 A continuous current the junction-to-case thermal rise must be kept under about 120 °C to stay within the 150 °C junction limit. The through-hole mounting suits point-to-point wiring on a perfboard or a PCB with drilled holes — no reflow profile needed.
The part is ROHS3 compliant.