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Infineon Technologies IPD60R145CFD7ATMA1

Infineon IPD60R145CFD7ATMA1 N-Channel MOSFET, 600V, 145mOhm

MPNIPD60R145CFD7ATMA1
End of Life

Infineon CoolMOS™ CFD7 series, N-Channel MOSFET, 600 V Vdss, 145 mOhm Rds(on) @ 6.8 A, 10 V, 16 A continuous drain current, DPAK (TO-252) surface mount, -55°C to 150°C junction temperature.

$3.33Ref. price · indicative, final on quote
PackagingTO-252-4, DPak (3 Leads + Tab)
RoHSROHS3 Compliant
SeriesCoolMOS™ CFD7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPD60R145CFD7ATMA1 specifications
ParameterValue
SeriesCoolMOS™ CFD7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation83W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-4, DPak (3 Leads + Tab)
Vgs(th) (Max) @ id4.5V @ 340µA
Rds on (Max) @ id, vgs145mOhm @ 6.8A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1330 pF @ 400 V

Product details

On-resistance and gate charge — the switching loss trade-off

The IPD60R145CFD7ATMA1: The 145 mOhm Rds(on) at 10 V drive is lower than the 950 mOhm of the IPD50R950CEAUMA1, which means lower conduction loss at the same current. The 31 nC gate charge at 10 V keeps the switching loss manageable for a 600 V part in this Rds(on) class.

The DPAK (TO-252) with 3 leads plus tab is a standard footprint for medium-power surface-mount assembly. The exposed tab carries the drain and needs a good solder joint to the PCB copper pour — treat it as the primary thermal path. 83 W power dissipation at the case means the board layout and any heatsinking determine the real limit.

No LTB or EOL notices are on record for this order code. For dual-sourcing or a lower-current variant, the IPD50R950CEAUMA1 (500 V, 950 mOhm) is a different voltage and Rds(on) class — not a pin-for-pin second source, but a functional alternative if the design can tolerate the higher conduction loss.

Frequently asked questions

Can I use IPD60R145CFD7 as a replacement for a failed MOSFET?

Yes, if the original was a 600 V N-channel MOSFET in a DPAK package with similar Rds(on) and gate charge. Verify the gate drive voltage (10 V for rated Rds(on)), the continuous current (16 A at 25°C case), and the switching frequency against the 1330 pF input capacitance.

Where can I buy IPD60R145CFD7ATMA1?

This part is sourced to order; availability and pricing are confirmed at quote time. Contact our sales team for current lead time and pricing.