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Infineon Technologies IPD60R145CFD7ATMA1

Infineon IPD60R145CFD7ATMA1 N-Channel MOSFET, 600V, 145mOhm

MPNIPD60R145CFD7ATMA1
End of Life

Infineon CoolMOS™ CFD7 series, N-Channel MOSFET, 600 V Vdss, 145 mOhm Rds(on) @ 6.8 A, 10 V, 16 A continuous drain current, DPAK (TO-252) surface mount, -55°C to 150°C junction temperature.

$3.33Ref. price · indicative, final on quote
PackagingTO-252-4, DPak (3 Leads + Tab)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPD60R145CFD7ATMA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ CFD7
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation83W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-4, DPak (3 Leads + Tab)
Vgs(th) (Max) @ id4.5V @ 340µA
Rds on (Max) @ id, vgs145mOhm @ 6.8A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1330 pF @ 400 V

Product details

On-resistance and gate charge — the switching loss trade-off

The IPD60R145CFD7ATMA1: The 145 mOhm Rds(on) at 10 V drive is lower than the 950 mOhm of the IPD50R950CEAUMA1, which means lower conduction loss at the same current. The 31 nC gate charge at 10 V keeps the switching loss manageable for a 600 V part in this Rds(on) class.

Package and thermal path

The DPAK (TO-252) with 3 leads plus tab is a standard footprint for medium-power surface-mount assembly. The exposed tab carries the drain and needs a good solder joint to the PCB copper pour — treat it as the primary thermal path. 83 W power dissipation at the case means the board layout and any heatsinking determine the real limit.

Lifecycle and sourcing

The IPD60R145CFD7ATMA1 carries an Active lifecycle status and is ROHS3 compliant. No LTB or EOL notices are on record for this order code. For dual-sourcing or a lower-current variant, the IPD50R950CEAUMA1 (500 V, 950 mOhm) is a different voltage and Rds(on) class — not a pin-for-pin second source, but a functional alternative if the design can tolerate the higher conduction loss.

Frequently asked questions

Can I use IPD60R145CFD7 as a replacement for a failed MOSFET?

Yes, if the original was a 600 V N-channel MOSFET in a DPAK package with similar Rds(on) and gate charge. Verify the gate drive voltage (10 V for rated Rds(on)), the continuous current (16 A at 25°C case), and the switching frequency against the 1330 pF input capacitance.

Where can I buy IPD60R145CFD7ATMA1?

This part is sourced to order; availability and pricing are confirmed at quote time. Contact our sales team for current lead time and pricing.