650 V NPT IGBT for automotive traction and PFC stages
The Infineon AIGB15N65H5ATMA1 is a 650 V, 30 A NPT (non-punch-through) IGBT from the Automotive Trenchstop™ 5 series, housed in a PG-TO263-3-2 (D²Pak) surface-mount package. Key features include a 2.1 V typical saturation voltage at 15 A and 15 V gate drive, a 40 nC gate charge, and a 175 °C maximum junction temperature — the latter critical for surviving the thermal cycling of motor drive and power factor correction (PFC) stages in hybrid/electric vehicle inverters, DC-DC converters, and industrial servo drives.
Ratings that drive the design decision
The 650 V collector-emitter breakdown voltage gives a comfortable derating margin on a nominal 400 V DC bus, absorbing the inductive clamp spikes common in hard-switched inverter bridges without avalanche failure. The 30 A continuous and 45 A pulsed collector current ratings size the part for motor drives in the 1–3 kW range, depending on thermal management. Switching energy is specified as 0.16 mJ (turn-on) and 0.04 mJ (turn-off) under the test condition of 400 V, 7.5 A, 39 Ω gate resistor, and 15 V gate drive. These numbers let you estimate switching losses in a hard-switched topology at a given frequency. The 24 ns / 22 ns typical delay times (on/off) at 25 °C confirm the part is fast enough for 20–50 kHz switching without excessive dead-time overhead. Gate charge is 40 nC. The 2.1 V Vce(on) at 15 A sets the conduction loss baseline.