RF front-end transistor for LNA stages up to 6 GHz
The Infineon BFP640FH6327XTSA1 is an NPN silicon-germanium RF transistor in a 4-TSFP package, designed for low-noise amplifier stages in wireless infrastructure, satellite receivers, and test equipment. It delivers 23 dB of gain with a transition frequency of 40 GHz, making it suitable for applications from 1.8 GHz through 6 GHz where noise figure matters — the part holds 0.65 dB to 1.2 dB across that band. Maximum collector current is 50 mA, and the collector-emitter breakdown sits at 4.5 V, so the bias point stays modest. The 4-TSFP package with flat leads keeps parasitic inductance low for microwave layouts.
The 4-TSFP package is a standard Infineon footprint shared across the BFP6xx series, making layout reuse straightforward if a higher-gain or higher-breakdown variant is needed later.