What this RF transistor is and where it fits
The Infineon BFP193E6327HTSA1 is an NPN silicon RF bipolar transistor with a collector current up to 80 mA and a collector-emitter breakdown of 12 V, with a transition frequency of 8 GHz. Typical applications include front-end LNAs in GSM, GPS, and ISM-band receivers, as well as VCO buffer stages. The PG-SOT-143-3D package is a standard surface-mount footprint, easy to place and rework with basic hot-air gear — no lab bench required for a swap.
Gain sits between 12 dB and 18 dB across the band. The noise figure runs 1 dB to 1.6 dB at 900 MHz to 1.8 GHz.
Active production — no obsolescence worry
Infineon lists this part as Active with RoHS3 compliance. There is no NRND or last-time-buy notice. That means you can spec it into a new BOM today and expect supply continuity for the foreseeable future. If you need a second-source option for dual-sourcing, the BFR181WH6327XTSA1 is a close functional match with similar gain and noise figure, though its power rating is lower at 175 mW.
Sourcing and supply
This part is sourced through independent distribution and quoted to order against an RFQ. No long lead-time surprises — the active status means Infineon is still running wafers.