1EBN1001AEXUMA1

Infineon Technologies · Automotive, AEC-Q100, EiceDriver™ Series

Infineon EiceDriver™, 1EBN1001AEXUMA1, single-channel high-side or low-side gate driver for IGBT, N-Channel and P-Channel MOSFET, 13V–18V supply, 1200V bootstrap, 50ns/90ns rise/fall, -40°C to 150°C TJ, 14-SOIC exposed pad PG-DSO-14-43, AEC-Q100 qualified.

Infineon Technologies 1EBN1001AEXUMA1
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[IN STOCK] In Stock: 5 pcs
$7.97/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

1EBN1001AEXUMA1 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q100, EiceDriver™
Gate typeIGBT, N-Channel, P-Channel MOSFET
Channel typeSingle
MountingSurface Mount
Supply voltage13V ~ 18V
Logic voltage - VIL, VIH1.5V, 3.5V
High side voltage - max (Bootstrap)1200 V
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Case14-SOIC (0.154\", 3.90mm Width) Exposed Pad
Number of drivers1
Driven configurationHigh-Side or Low-Side
Rise (Fall time)50ns, 90ns

Technical details

The Infineon 1EBN1001AEXUMA1 is a single-channel gate driver from the EiceDriver™ family, configured for high-side or low-side drive of IGBTs, N-channel, and P-channel MOSFETs. It is AEC-Q100 qualified, placing it squarely in automotive-grade applications—traction inverters, DC-DC converters, on-board chargers, and motor drives where the ambient temperature can push junction temperatures to 150°C. The 13V to 18V supply range and 1200V bootstrap rating mean it can drive the high-side switch in a 400V or 800V DC bus without an external isolated supply, a common topology in electric-vehicle powertrain stages.

Infineon lists the 1EBN1001AEXUMA1 as Active. The part carries ROHS3 compliance.

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