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Infineon Technologies BFR181WH6327XTSA1 — Discrete Semiconductors
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RoHS Compliant · Lead-Free EIA-481 Standard
Infineon Technologies / Discrete Semiconductors

BFR181WH6327XTSA1 NPN RF Transistor, 8 GHz, 19 dB Gain

MPN BFR181WH6327XTSA1
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Infineon BFR181WH6327XTSA1 NPN RF transistor, 8 GHz transition frequency, 19 dB gain, 0.9 dB noise figure at 900 MHz, 12 V Vce, 20 mA Ic, 175 mW max power, SOT-323 package.

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[SPEC] Essential Parameters Snapshot Full Specifications (12)
Package / Case SC-70, SOT-323

Full Technical Specifications

12 Parameters
BFR181WH6327XTSA1 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown12V
Current - collector (Ic)20mA
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 8V
Power - max175mW
Frequency - transition8GHz
Operating temperature150°C (TJ)
Gain19dB
PackageTape & Reel (TR); Cut Tape (CT)
CaseSC-70, SOT-323
Noise figure (dB typ @ f)0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
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Technical Details & Description

RF front-end transistor for LNA and oscillator stages

The Infineon BFR181WH6327XTSA1 is an NPN silicon RF transistor for low-noise amplifier and oscillator applications. Its 8 GHz transition frequency and 19 dB gain suit the 900 MHz to 1.8 GHz bands.

Package and mounting — SOT-323 footprint

The part comes in a standard SC-70 / SOT-323 package (Infineon code PG-SOT323) with three leads. It is surface-mount only.

ROHS3 compliant, so it meets current European and most global restrictions on hazardous substances. No AEC-Q qualification is cited, so it is not formally automotive-grade; keep it for commercial, industrial, or telecom infrastructure designs where the temperature range (junction to 150 °C) is sufficient.

Frequently asked questions

What is the frequency of BFR181WH6327XTSA1?

The transition frequency (fT) is 8 GHz. This is the frequency at which the current gain drops to unity, and it indicates the part is usable for amplification up to several gigahertz — typically 900 MHz to 1.8 GHz in practice.

What is the equivalent of BFR181WH6327XTSA1?

The closest functional equivalent in the same family is the BFP193E6327HTSA1. It is also an NPN RF transistor with 8 GHz fT, but its gain range is 12 dB to 18 dB and its noise figure is slightly higher at 1 dB to 1.6 dB over the same frequency band. Pin-compatible in SOT-323, so a drop-in swap is possible if the noise budget allows.

What is the power dissipation of BFR181WH6327XTSA1?

Maximum power dissipation is 175 mW. This is a small-signal transistor; do not use it as a driver or output stage.

What is the gain of BFR181WH6327XTSA1?

The listed gain is 19 dB. That is the typical forward transfer gain at the transition frequency.

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