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Infineon Technologies BFR35APE6327HTSA1 — Signal Isolation

Infineon BFR35APE6327HTSA1 RF NPN Transistor, 5 GHz, SOT-23

MPNBFR35APE6327HTSA1
End of Life

Infineon BFR35APE6327HTSA1 NPN RF transistor, 15 V Vceo, 5 GHz transition frequency, gain 10.5 dB to 16 dB, noise figure 1.4 dB to 2 dB at 900 MHz to 1.8 GHz, SOT-23-3 surface-mount package.

$0.48Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BFR35APE6327HTSA1 specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown15V
Current - collector (Ic)45mA
DC current gain (hFE) (Min) @ ic, vce70 @ 15mA, 8V
Power - max280mW
Frequency5GHz
Operating temperature150°C (TJ)
Gain10.5dB ~ 16dB
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Noise figure (dB typ @ f)1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

Product details

RF NPN transistor for low-noise front-ends and driver stages

The Infineon BFR35APE6327HTSA1 is an NPN silicon RF transistor in a SOT-23-3 surface-mount package, with a 5 GHz transition frequency and gain range of 10.5 dB to 16 dB. The noise figure sits at 1.4 dB to 2 dB across 900 MHz to 1.8 GHz.

Collector-emitter breakdown is rated at 15 V. Maximum collector current is 45 mA. Power dissipation maxes at 280 mW. DC current gain is a minimum of 70 at 15 mA, 8 V — a consistent beta that simplifies bias network design across the production spread.

Supplied in the standard SOT-23-3 footprint (TO-236-3 / SC-59), with supplier device package PG-SOT23.

Frequently asked questions

Where can I buy BFR35APE6327HTSA1?

This part is sourced to order against an RFQ through independent distribution. Submit a request for current pricing and availability; lead time and stock are confirmed at quote time.

What are the exact specifications of BFR35APE6327HTSA1?

NPN RF transistor, 15 V Vceo, 5 GHz fT, gain 10.5 dB to 16 dB, noise figure 1.4 dB to 2 dB at 900 MHz to 1.8 GHz, max collector current 45 mA, max power 280 mW, DC current gain min 70 at 15 mA / 8 V, SOT-23-3 package, operating junction temperature 150°C.