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NXP Semiconductors BUK7507-55B,127 — Discrete Semiconductors
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NXP Semiconductors / Discrete Semiconductors

NXP BUK7507-55B,127 TrenchMOS N-Channel MOSFET

MPN BUK7507-55B,127
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

NXP TrenchMOS™ N-Channel MOSFET, 55V Vdss, 75A continuous drain, 7.1mOhm Rds(on) at 25A/10V, 53nC gate charge, TO-220AB through-hole package, -55°C to 175°C junction temperature.

In Stock: 3,998 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$0.48 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$0.48
10+ pcs
$0.43
30+ pcs
$0.39
100+ pcs
$0.36
500+ pcs
$0.33
1,000+ pcs
$0.31
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$0.48 / ea

3,998 in stock — maximum per order · 3–4 days lead time

$0.43 / ea from 10 pcs
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100% Original Sealed 45x Microscope QC 30-Day Warranty · COC USD T/T & PI · DAP/DDP
[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case TO-220-3
Output / Current 55 V

Full Technical Specifications

16 Parameters
BUK7507-55B,127 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation203W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs7.1mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs53 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3760 pF @ 25 V
Series Sibling Variants

NXP Semiconductors TrenchMOS™ Series Models

Sibling variants, package options, and speed/density grades in this NXP Semiconductors semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

BUK661R6-30C118
N-CHANNEL POWER MOSFET
View Availability & Specs
BUK6C3R3-75C,118
Nexperia TrenchMOS™ BUK6C3R3-75C,118, N-Channel MOSFET, 75 V Vdss, 181 A Id, 3.4 mOhm Rds(on) at 10 V, D2PAK-7, AEC-Q101, -55 to 175 °C.
View Availability & Specs
BUK7507-30B,127
NXP BUK7507-30B,127 TrenchMOS N-Channel MOSFET, 30V Vdss, 75A Id, 7mOhm Rds(on) at 10V, 36nC Qg, TO-220AB, -55°C to 175°C.
View Availability & Specs
BUK7510-100B,127
NXP TrenchMOS BUK7510-100B,127 N-channel MOSFET, 100V Vdss, 75A Id, 10mOhm Rds(on) at 10V, TO-220AB through-hole, -55°C to 175°C junction temperature.
View Availability & Specs
BUK7510-55AL127
NXP TrenchMOS N-Channel MOSFET, BUK7510-55AL127, 55 V, 75 A, 10 mOhm Rds(on) at 25 A, 10 V, TO-220AB, -55°C to 175°C.
View Availability & Specs
BUK7516-55A,127
NXP TrenchMOS™ N-Channel MOSFET, BUK7516-55A,127, 55V Vdss, 65.7A Id, 16mOhm Rds(on) at 10V, TO-220AB, -55°C to 175°C.
View Availability & Specs

Technical Details & Description

55 V, 75 A, 7.1 mΩ — the conduction-loss anchor for a 48 V bus

The BUK7507-55B,127: The 7.1 mΩ maximum on-resistance at 25 A with 10 V gate drive sets conduction loss in a motor-drive or battery-switch path.

Junction temperature and the thermal budget

The junction temperature range runs from -55°C to 175°C, covering military-grade cold soak and the hot end of an under-hood or industrial enclosure. Power dissipation is rated at 203 W at the case — that number assumes an infinite heatsink; real designs need to derate against the thermal resistance of the chosen heatsink and airflow.

If you are reviewing a BOM for a motor-drive or power-supply line that used this part, you are not under a lifecycle squeeze.

Sourcing posture

We source the BUK7507-55B,127 through independent distribution. Submit an RFQ for a firm price and lead-time commitment on your quantity.

Frequently asked questions

Where can I buy BUK7507-55B,127 and get a price?

Submit a request with your target quantity and we will confirm current pricing and availability at quote time.

What are the equivalents for BUK7507-55B?

The BUK7507-55B,127 is a 55 V, 75 A, 7.1 mΩ N-channel TrenchMOS in TO-220AB. Pin-compatible equivalents would share the same TO-220-3 footprint and similar parametric window — 55 V to 60 V Vdss, 75 A or higher drain current, and on-resistance at or below 7.1 mΩ at 10 V gate drive. The IRF3205 (55 V, 110 A, 8 mΩ) is a common cross-shop candidate but has a higher on-resistance; verify Rds(on) against your conduction-loss budget before substituting.

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