BUK661R6-30C118 - NXP Semiconductors
MPNBUK661R6-30C118
End of Life
N-CHANNEL POWER MOSFET
$0.81Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSNot applicable
SeriesTrenchMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 306W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Bulk |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 2.8V @ 1mA |
| Rds on (Max) @ id, vgs | 1.6mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 229 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 14964 pF @ 25 V |