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NXP Semiconductors BUK7510-100B,127 — Discrete Semiconductors

BUK7510-100B,127 N-Channel MOSFET, 100V 75A 10mOhm TO-220AB

MPNBUK7510-100B,127
End of Life

NXP TrenchMOS BUK7510-100B,127 N-channel MOSFET, 100V Vdss, 75A Id, 10mOhm Rds(on) at 10V, TO-220AB through-hole, -55°C to 175°C junction temperature.

$0.76Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesTrenchMOS™
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BUK7510-100B,127 specifications
ParameterValue
SeriesTrenchMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C75A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs10mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6773 pF @ 25 V

Product details

100 V, 75 A, 10 mOhm — the selection mistake this part avoids

This is a through-hole TO-220AB device, so the thermal path goes through the tab to a heatsink, not a PCB pad.

What the 10 mOhm Rds(on) means for your power budget

At 25 A drain current, the 10 mOhm maximum on-resistance produces 6.25 W of conduction loss — manageable with a modest heatsink in a TO-220 package. The gate charge is 80 nC at 10 V, so the gate driver needs to source about 8 nC per volt of gate swing; a standard 1 A gate driver will switch this FET in the tens of nanoseconds.

ROHS3 compliant per the listing.

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