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NXP Semiconductors BUK7516-55A,127 — Discrete Semiconductors
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RoHS Compliant · Lead-Free EIA-481 Standard
NXP Semiconductors / Discrete Semiconductors

BUK7516-55A,127 N-Channel TrenchMOS MOSFET, 55V, 65.7A

MPN BUK7516-55A,127
End of Life Spot Stock · 24-48h Dispatch 100% Original Sealed

NXP TrenchMOS™ N-Channel MOSFET, BUK7516-55A,127, 55V Vdss, 65.7A Id, 16mOhm Rds(on) at 10V, TO-220AB, -55°C to 175°C.

In Stock: 4,353 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
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$0.33
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[SPEC] Essential Parameters Snapshot Full Specifications (15)
Package / Case TO-220-3
Output / Current 55 V

Full Technical Specifications

15 Parameters
BUK7516-55A,127 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C65.7A (Tc)
Power dissipation138W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 1mA
Rds on (Max) @ id, vgs16mOhm @ 25A, 10V
Input capacitance (Ciss) (Max) @ vds2245 pF @ 25 V
Series Sibling Variants

NXP Semiconductors TrenchMOS™ Series Models

Sibling variants, package options, and speed/density grades in this NXP Semiconductors semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

BUK661R6-30C118
N-CHANNEL POWER MOSFET
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BUK6C3R3-75C,118
Nexperia TrenchMOS™ BUK6C3R3-75C,118, N-Channel MOSFET, 75 V Vdss, 181 A Id, 3.4 mOhm Rds(on) at 10 V, D2PAK-7, AEC-Q101, -55 to 175 °C.
View Availability & Specs
BUK7507-30B,127
NXP BUK7507-30B,127 TrenchMOS N-Channel MOSFET, 30V Vdss, 75A Id, 7mOhm Rds(on) at 10V, 36nC Qg, TO-220AB, -55°C to 175°C.
View Availability & Specs
BUK7507-55B,127
NXP TrenchMOS™ N-Channel MOSFET, 55V Vdss, 75A continuous drain, 7.1mOhm Rds(on) at 25A/10V, 53nC gate charge, TO-220AB through-hole package, -55°C to 175°C junction temperature.
View Availability & Specs
BUK7510-100B,127
NXP TrenchMOS BUK7510-100B,127 N-channel MOSFET, 100V Vdss, 75A Id, 10mOhm Rds(on) at 10V, TO-220AB through-hole, -55°C to 175°C junction temperature.
View Availability & Specs
BUK7510-55AL127
NXP TrenchMOS N-Channel MOSFET, BUK7510-55AL127, 55 V, 75 A, 10 mOhm Rds(on) at 25 A, 10 V, TO-220AB, -55°C to 175°C.
View Availability & Specs

Technical Details & Description

The NXP BUK7516-55A,127 is a 55 V, 65.7 A N-channel TrenchMOS power MOSFET in a through-hole TO-220AB package.

Gate drive voltage and Rds(on) — the 10 V gate-drive requirement

The 16 mOhm Rds(on) is specified at Vgs = 10 V, which is the drive voltage for minimum on-resistance. Designs using 3.3 V MCU outputs need a gate driver or level shifter to reach 10 V for full rated performance.

Derate the 65.7 A continuous current rating above 25°C case temperature per the datasheet's thermal curve.

Input capacitance and switching speed

The input capacitance (Ciss) is 2245 pF typical at Vds = 25 V. This is moderate for a 65 A rated MOSFET — the gate driver must supply enough peak current to charge and discharge this capacitance for fast switching. A 1 A gate driver will handle switching frequencies up to several hundred kHz; for higher frequencies, budget gate drive current accordingly.

It is ROHS3 compliant.

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