Total gate charge is 124 nC at 10 V, and input capacitance is 6280 pF at 25 V drain-source. These numbers define the gate-driver current needed to hit the target switching frequency — a 124 nC gate at 50 kHz draws 6.2 mA average from the driver, well within the capability of a standard MOSFET driver IC.
Thermal headroom in a TO-220AB
The TO-220AB package (through-hole, three leads) dissipates up to 300 W at the case. The 4 V maximum gate threshold at 1 mA drain current means a 10 V gate drive is needed to fully enhance the channel and hit the rated Rds(on).