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Goford Semiconductor G3401L — Discrete Semiconductors

Goford Semiconductor G3401L

MPNG3401L
Active

P30V,RD(MAX)<60M@-10V,RD(MAX)<70

$0.47Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

G3401L specifications
ParameterValue
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Current - continuous drain (Id) @ 25°C4.2A
Power dissipation1.2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.3V @ 250µA
Rds on (Max) @ id, vgs60mOhm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs8.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds880 pF @ 15 V