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Goford Semiconductor G110N06K — Discrete Semiconductors

Goford Semiconductor G110N06K

MPNG110N06K
Active

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

$1.46Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

G110N06K Technical Specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
Mounting typeSurface Mount
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C110A (Tc)
Power dissipation160W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureStandard
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs6.4mOhm @ 4A, 10V