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18N10 - Goford Semiconductor
MPN 18N10
Active
Spot Stock · 24-48h Dispatch
100% Original Sealed
N100V,RD(MAX)<53M@10V,RD(MAX)<63
In Stock: 3 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$0.48 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$0.48
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$0.48 / ea
3 in stock — maximum per order · 3–4 days lead time
[SPEC] Essential Parameters Snapshot Full Specifications (17)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Output / Current 100 V
Full Technical Specifications
17 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 25A (Tc) |
| Power dissipation | 62.5W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Standard |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 53mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 28 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1318 pF @ 50 V |
Series Sibling Variants
Goford Semiconductor TrenchFET® Series Models
Sibling variants, package options, and speed/density grades in this Goford Semiconductor semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
03N06L
N60V,RD(MAX)<100M@10V,RD(MAX)<12
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3400L
N30V,RD(MAX)<27M@10V,RD(MAX)<33M
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630A
N200V,RD(MAX)<280M@10V,VTH1V~3V,
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G01N20LE
N200V,RD(MAX)<850M@10V,RD(MAX)<9
View Availability & Specs
G04P10HE
P-100V,-4A,RD(MAX)<200M@-10V,VTH
View Availability & Specs
G06P01E
P12V,RD(MAX)<28M@-4.5V,RD(MAX)<4
View Availability & Specs
18N10
Verified Allocation