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Goford Semiconductor G7K2N20LLE — Discrete Semiconductors

Goford Semiconductor G7K2N20LLE

MPNG7K2N20LLE
Active

N-PH,200V, ESD,2A,RD<0.7@10V,VTH

$0.35Ref. price · indicative, final on quote
PackagingSOT-23-6
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

G7K2N20LLE Technical Specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C2A (Tc)
Power dissipation1.8W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureStandard
CaseSOT-23-6
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs700mOhm @ 1A, 10V
Gate charge (Qg) (Max) @ vgs10.8 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds577 pF @ 100 V