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SQD40052EL_GE3 - Vishay
MPN SQD40052EL_GE3
End of Life
Spot Stock · 24-48h Dispatch
100% Original Sealed
AUTOMOTIVE N-CHANNEL 40 V (D-S)
In Stock: 6 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d)
Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$0.80 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$0.80
Working on a production BOM or have a target unit price? Submit Target Price
$0.80 / ea
6 in stock — maximum per order · 3–4 days lead time
[SPEC] Essential Parameters Snapshot Full Specifications (16)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Output / Current 40 V
Full Technical Specifications
16 Parameters| Parameter / Attribute | Specification / Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 30A (Tc) |
| Power dissipation | 62W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 6mOhm @ 15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 52 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2600 pF @ 25 V |
Series Sibling Variants
Vishay TrenchFET® Series Models
Sibling variants, package options, and speed/density grades in this Vishay semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.
SI1012CR-T1-GE3
MOSFET N-CH 20V SC75A
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MOSFET N-CH 20V 500MA SC75A
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SI1013CX-T1-GE3
MOSFET P-CH 20V 450MA SC89-3
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SI1013R-T1-GE3
MOSFET P-CH 20V 350MA SC75A
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SI1013X-T1-GE3
MOSFET P-CH 20V 350MA SC89-3
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SI1016X-T1-GE3
MOSFET N/P-CH 20V SC89-6
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SQD40052EL_GE3
Verified Allocation