SI1016X-T1-GE3

Vishay · TrenchFET® Series

MOSFET N/P-CH 20V SC89-6

Vishay SI1016X-T1-GE3
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

SI1016X-T1-GE3 specifications
Parameter / AttributeSpecification / Value
SeriesTrenchFET®
FET typeN and P-Channel
MountingSurface Mount
Drain to source voltage20V
Current - continuous drain (Id) @ 25°C485mA, 370mA
Power - max250mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
CaseSOT-563, SOT-666
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs700mOhm @ 600mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.75nC @ 4.5V
SI1016X-T1-GE3
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