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Vishay SI1012CR-T1-GE3

SI1012CR-T1-GE3 - Vishay

MPNSI1012CR-T1-GE3
End of Life

MOSFET N-CH 20V SC75A

$0.48Ref. price · indicative, final on quote
PackagingSC-75, SOT-416
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI1012CR-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.5V, 4.5V
Current - continuous drain (Id) @ 25°C630mA (Ta)
Power dissipation240mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±8V
TechnologyMOSFET (Metal Oxide)
CaseSC-75, SOT-416
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs396mOhm @ 600mA, 4.5V
Gate charge (Qg) (Max) @ vgs2 nC @ 8 V
Input capacitance (Ciss) (Max) @ vds43 pF @ 10 V