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Vishay SI1013X-T1-GE3

SI1013X-T1-GE3 - Vishay

MPNSI1013X-T1-GE3
End of Life

MOSFET P-CH 20V 350MA SC89-3

$0.45Ref. price · indicative, final on quote
PackagingSC-89, SOT-490
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SI1013X-T1-GE3 specifications
ParameterValue
SeriesTrenchFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C350mA (Ta)
Power dissipation250mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±6V
TechnologyMOSFET (Metal Oxide)
CaseSC-89, SOT-490
Vgs(th) (Max) @ id450mV @ 250µA (Min)
Rds on (Max) @ id, vgs1.2Ohm @ 350mA, 4.5V
Gate charge (Qg) (Max) @ vgs1.5 nC @ 4.5 V