SI1012R-T1-GE3 – TrenchFET N-CH 20V 500mA SC-75A
MPNSI1012R-T1-GE3
End of Life
MOSFET N-CH 20V 500MA SC75A
$0.45Ref. price · indicative, final on quote
PackagingSC-75, SOT-416
RoHSROHS3 Compliant
SeriesTrenchFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | TrenchFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 500mA (Ta) |
| Power dissipation | 150mW (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±6V |
| Technology | MOSFET (Metal Oxide) |
| Case | SC-75, SOT-416 |
| Vgs(th) (Max) @ id | 900mV @ 250µA |
| Rds on (Max) @ id, vgs | 700mOhm @ 600mA, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 0.75 nC @ 4.5 V |