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Vishay SI1012R-T1-GE3

SI1012R-T1-GE3 – TrenchFET N-CH 20V 500mA SC-75A

MPNSI1012R-T1-GE3
End of Life

MOSFET N-CH 20V 500MA SC75A

$0.45Ref. price · indicative, final on quote
PackagingSC-75, SOT-416
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SI1012R-T1-GE3 Technical Specifications
ParameterValue
SeriesTrenchFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)1.8V, 4.5V
Current - continuous drain (Id) @ 25°C500mA (Ta)
Power dissipation150mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±6V
TechnologyMOSFET (Metal Oxide)
CaseSC-75, SOT-416
Vgs(th) (Max) @ id900mV @ 250µA
Rds on (Max) @ id, vgs700mOhm @ 600mA, 4.5V
Gate charge (Qg) (Max) @ vgs0.75 nC @ 4.5 V